Abstract
SUMMARYAnnealing behaviour of amorphous layer in S+ implanted GaAs is studied by employing transmission electron microscopy technique. The amorphous layer is annealed inside the electron microscope by withdrawing the condenser aperture. The transformation of amorphous layer into polycrystalline layer is found to occur in the near surface region. Formation of twins is observed near the interface of amorphous crystalline region. Coarsening of grains occur on further annealing. The findings of the present experiment is compared with the explosive recrystallization behaviour of amorphous Si under laser and electron irradiation (Narayan et al., 1983). It has been concluded that both solid phase and liquid phase epitaxial regrowth of the amorphous GaAs layer have taken place upon electron irradiation.
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