Abstract
Furnace annealing and lamp annealing of aluminum implanted layers in 4H silicon carbide (SiC) were investigated with respect to surface degradation and electrical parameters. A sheet resistance of about 20kW/ı was obtained for an aluminum implantation dose of 1.2×1015cm-2 and annealing in the furnace at 1700°C for 30min. For the same implantation dose, lamp annealing at 1770°C for 5min resulted in a three times higher sheet resistance of 60kW/ı. The surface roughness was best for the lamp system and stayed below 1nm for Al doses lower than 1×1015cm-2.
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