Abstract
In the present study attempts have been made to investigate the effect of heat treatment on latent tracks in a soda lime glass detector. Glass detectors exposed to 1132 54Xe-ions have been obtained from JINR, Dubna (U.S.S.R.). The effects of different annealing conditions on bulk etch rate of glass detector and on diameters of Xe-ion tracks have been presented. Experimental results show that there is a decrease in track etch rate, etching efficiency and etchable range of Xe-ions with annealing. The experimental values of activation energies for different fading percentages of Xe-ion tracks in glass detectors indicate that the damage in glasses is not electronic in nature but consists of atomic disorder. The annealing of oblique tracks shows that the vertical tracks are stable for longer periods than oblique tracks.
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