Abstract
Abstract A floating zone 100 ohm-cm boron-doped silicon, homogeneously compensated with lithium by the drift technique, was aged for several months at room temperature prior to irradiation in the Co60−gamma source at 35 °C. After aging such a material turned to be slightly undercompensated p-type. As a result of irradiation, there was a decrease in the concentration of free lithium ions directly proportional to the gamma fluence. Two deep donor levels, located at Ev + 0.29 eV and Ev + 0.32 eV were detected immediately after irradiation and attributed to the Li-V or Li-V-O complexes. A relatively fast precipitation of free lithium ions, with a time constant inversely proportional to the gamma fluence, was observed up to 30 to 40 days after irradiation. A short annealing at temperatures from 230 to 275 °C almost restored the initial free lithium ion concentration. Heating at higher temperatures caused lithium outdiffusion to the surface. The present results were compared with those already published and dis...
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