Annealing influences on phosphorus-ion-implanted vicinal Si(111) studied by reflective second-harmonic generation

Abstract

Annealing effects on the implanted vicinal Si(111) were analyzed by reflective second-harmonic generation (RSHG). The phenomena of impurity diffusion and precipitation were observed through the anisotropic contribution of the ${C}_{3V}$ component in the RSHG rotational anisotropy experiments for a series of rapid thermal annealing (RTA) times. The surface reconstruction of the implanted vicinal Si(111) was clearly observed due to the contribution of the ${C}_{1V}$ symmetry which is raised from the step structure on the vicinal surface. The enhanced value of the ${C}_{1V}$ component originates because P atoms participate in the surface reconstruction. The phase difference between the ${C}_{3V}$ and ${C}_{1V}$ components has large variations at lower RTA temperature because the reconstruction situation near the surface was not completed until the RTA time of $30\phantom{\rule{0.3em}{0ex}}\mathrm{s}$ and was influenced by the precipitation of P atoms. With the assistance of step structure on vicinal Si(111), the reconstruction of the implanted Si(111) reveals more physical information.