Abstract
As-grown Ar-deposited Cd1−xVxO and Ar/O2-deposited Cd1−yVyO feature lower and higher electron concentrations than 4 × 1020 cm−3, respectively. After isothermal and isochronal annealing under N2 ambient, we find that the two series exhibit a decrease or increase in electron concentrations until ~4 × 1020 cm−3 which is close to Fermi stabilization energy (EFS) level of CdO, with the assistance of native defects. An amphoteric defects model is used to explain the changing trends in electron concentrations. The tendencies in mobility further confirm our results. This work may provide some strategies to predict the electrical properties in CdO.
Highlights
Physics Department and Jiangsu Key Laboratory for Chemistry of Low Dimensional Materials, Department of Physics, City University of Hong Kong, Kowloon Tong, Hong Kong 999077, China
V enter into the Cadmium oxide (CdO) lattice and are supposed to substitute for Cd sites based on electronegativity
The exact location of EFS in CdO has been determined through the ionic irradiation induced defects which results in the electron concentration stabilizing at a saturation level of ~5 × 1020 cm−3 [20]
Summary
After annealing, the high (low) electron concentrations in Ar (Ar/O2 )-deposited V-doped CdO downward (upward) shift to a saturation value at an annealing temperature of 500 ◦ C. The exact location of EFS in CdO has been determined through the ionic irradiation induced defects which results in the electron concentration stabilizing at a saturation level of ~5 × 1020 cm−3 [20].
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