Abstract
Electronic properties of poly-Si thin films fabricated by atmospheric pressure chemical vapor deposition (APCVD) were improved by annealing in H2O or D2O vapors. Hall mobility was improved from 4.45cm−2/Vs to 25.1cm−2/Vs after 1h D2O vapor treatment at 300°C, i.e., nearly the same value as after optimized plasma hydrogenation. Unlike the hydrogen plasma treatment, annealing did not introduce disorder into the material, judged by the width of Raman LO-TO band. Water vapor treatment is a novel approach to improvement of thin films properties, with potentially low cost suitable for mass production of solar cells, but its mechanism is not yet clear.
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