Annealing effects when activating dopant atoms in ion-implanted diamond layers

Abstract

Activation of boron-dopant atoms implanted into diamonds has been studied using the cold-implantation rapid-annealing technique. Measurements of the sheet resistances generated, indicate that self-interstitial-vacancy recombination improves with increasing annealing temperature, while boron-atom-vacancy combination is more effective at lower temperatures. For the implantation conditions and heating cycle employed, this behaviour results in an optimum annealing temperature at which the uncompensated boron acceptors reach a maximum density.