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Abstract
W-doped VO2 thin films were prepared by magnetron sputtering after annealing in vacuum. The structure, morphology, infrared transmittance and phase transition were characterized by X-ray diffractometer, atomic force microscopy(AFM), infrared spectrometer (IR) and differential thermal analysis(DTA), respectively. The results show that after vacuum annealing at 500 °C for 2h, the major phase of W doped films is VO2. Dopant reduce the phase transition temperature of VO2 thin films to 21.9°C.
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