Annealing effects on the structural and optical properties of [formula omitted] nanobelts synthesized by microwave plasma chemical vapor deposition

Abstract

We have synthesized β - Ga 2 O 3 nanobelts on the silicon substrates by microwave plasma chemical vapor deposition (MPCVD). The morphology and structure of β - Ga 2 O 3 nanobelts characterized by scanning electron microscopy (SEM) were not influenced through the thermal annealing. The photoluminescence properties of β - Ga 2 O 3 nanobelts measured under different excitation wavelength, annealing temperature and annealing time indicated that as-prepared and annealed nanobelts had a blue and an ultraviolet emission (under excitation wavelength of 250 nm at 316 and 432 nm, under excitation wavelength of 325 at 428 nm), but the relative peak intensities of ultraviolet and blue emission, respectively, increase and decrease by the thermal annealing.