Abstract
Annealing effects on the properties of InGaAsN/GaAsSb type‐II quantum well (QW) diodes grown on InP substrates by molecular beam epitaxy (MBE) were studied. It was found that the peak of electroluminescence (EL) shows drastic red‐shift and the reverse‐biased current of the current–voltage (I–V) characteristic of the type‐II QW diode increases by the annealing. In addition, we found that the electron effective mass of the InGaAsN layer of the type‐II InGaAsN/GaAsSb multiple quantum wells (MQWs) estimated by the temperature dependence of the amplitude of the Shubnikov‐de Haas (SdH) oscillations decreases by the annealing. The mechanism of the observed annealing effects was discussed.
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