Abstract
Thermal annealing effects on electrical and structural properties of Ru/Au Schottky contact to n-type GaN ( n d = 4.07 × 10 17 cm −3) have been investigated using current–voltage ( I– V), capacitance–voltage ( C– V), Auger electron spectroscopy (AES) and X-ray diffraction (XRD). The Schottky barrier height of the as-deposited sample was found to be 0.75 eV ( I– V) and 0.93 eV ( C– V), respectively. It is noted that the barrier height increased when the contact was annealed at 300 °C and slightly decreased upon annealing at temperatures of 400 °C and 500 °C. The extracted Schottky barrier heights are 0.99 eV ( I– V), 1.34 eV ( C– V) for 300 °C, 0.88 eV ( I– V), 1.20 eV ( C– V) for 400 °C and 0.72 eV ( I– V), 1.08 eV ( C– V) for 500 °C annealed contacts, respectively. Further it is observed that annealing results in the improvement of electrical properties of Ru/Au Schottky contacts. Based on Auger electron spectroscopy and X-ray diffraction studies, the formation of gallide phases at the Ru/Au/n-GaN interface could be the reason for the improvement of electrical characteristics upon annealing at elevated temperatures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
