Abstract
We investigated the annealing effect on single Shockley faults (SSFs) in the SiC epitaxial layers by photoluminescence mapping in combination with high-power laser illumination. Comparing before and after annealing at 350–550°C, it became obvious that annealing results in the shrinking of the faulted area of SSFs. When high-power laser illumination is performed again on the same area annealed at 550°C, the right-angled triangular SSFs reformed into exactly the same features as those before annealing, but the isosceles triangular SSFs did not reform. The annealing temperature to start shrinking the faulted area differs according to the type of SSF.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
