Abstract
Annealing effects on second harmonic generation of a segmented KTiOPO4 waveguide fabricated by ion-exchange of Rb/Ba for K have been studied. Conversion efficiency was not affected by annealing at 250° C for 20 min but was greatly reduced by annealing at 400° C for 20 min. The results of selective etching by KOH/KNO3 showed that domain inversion of an ion-exchanged region remained even after annealing at 400° C. The lower conversion efficiency of the sample annealed at 400° C can be partly explained in terms of the lower power density of the fundamental beam and a relatively shallower depth of domain inversion than that of the waveguide due to the deepening of the waveguide caused by the diffusion of Rb and Ba inside the KTiOPO4 crystal.
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