Abstract
A series of LaB6/ATO films were deposited by magnetron sputtering at room temperature with the same deposition parameters. After deposition, the films were annealed at 400°C, 700°C and 1000°C, respectively. The structure, morphology and opto-electrical characteristics of films were studied. It was found that the temperature for primary nucleation of LaB6 films was about 700°C. The crystallinity and transmissivity increased with increasing annealing temperature. After annealing at 1000°C, the films exhibited a much higher transmissivity in the visible region than in the near-infrared area. However, the resistivity increased by one order of magnitude after heat treatment and the films without annealing presented the best electrical property.
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