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Abstract
The influence of annealing temperature on the output characteristics of solution processable vertical organic light-emitting transistor (VOLET) was investigated. Poly[(vinylidenefluoride-co-trifluoroethylene] (PVDF-TrFE) and poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) have been used as a dielectric and emissive layer, respectively, in a silver nanowire (AgNW) sourced VOLET. It was found that the performance of the VOLET is the best after annealed at 100 oC. A high polarization of the PVDF-TrFE promotes more charged carrier to be accumulated at AgNW/MEH-PPV interface. Surface morphology and photoluminescence results show that a high surface roughness of MEH-PPV exhibit bright emission due to reduction of internal reflection of light emission.
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