Annealing effects on lattice defects in lattice mismatched InGaAS on gaas

Abstract

Thermal annealing effects on lattice relaxations and defects were investigated in lattice-mismtached InGaAs layers on GaAs substrates. In the psudomorpic thin InGaAs layers, the lattice relaxation occurred by the annealing. In the partially relaxed thick InGaAs layers, the lattice relaxation was enhanced and the distribution of dislocation was changed. We found that the 2-step growth method was effective to reduce the residual strain and dislocation density in lattice mismatched InGaAs layers.