Abstract
ABSTRACTProgressive annealing of a-Si:D and a-Si:DH samples between 250 and 600°C is found to eliminate the broad central deuteron magnetic resonance (DMR) spectral component associated with weakly bonded D. The well-resolved doublet arising from tightly bound D diminishes in intensity. The narrow central line associated with microvoid-contained molecular D2 and HD increases and then decreases for the warmest anneals. DMR relaxation times, line shapes, and hole-burning spectra reflect changes in sample morphology upon annealing.
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