Abstract
Zinc sulfide (ZnS) thin films were prepared and synthesized by the chemical bath deposition (CBD) technique on microscopic glass substrates using stoichiometric amounts of the precursor materials (ZnSO4·7H2O, NH4OH, and CS(NH2)2). Structural, morphological, compositional, and optical characterization of the films were studied. The obtained thin films were found to exhibit polycrystalline possessions. The effect of annealing temperature on the crystallographic structure and optical bandgap of ZnS thin films were both examined. The grain size and unit cell volume were both found to be increased. In addition, the strain, dislocation density, and the number of crystallites were found to be decreased with annealing temperature at 300 °C. However, the annealed sample was perceived to have more Zn content than S. The optical characterization reveals that the transmittance was around 76% of the as-deposited thin film and had been decreased to ~50% with the increasing of the annealing temperature. At the same time, the bandgap energy of the as-deposited film was 3.98 eV and was found to be decreased to 3.93 eV after annealing.
Highlights
Zinc sulfide (ZnS) is an II-VI compound semiconductor that is found in two forms: a cubic form (c-ZnS) and hexagonal form (h-ZnS)
ZnS thin films can be synthesized by several techniques such as Chemical Vapor
ZnS thin films were prepared by immersing the substrate in a beaker containing the mixture of precursor materials (0.03 M zinc sulfate heptahydrate (ZnSO4 ·7H2 O) as2+Zn2+
Summary
ZnS is an II-VI compound semiconductor that is found in two forms: a cubic form (c-ZnS) and hexagonal form (h-ZnS). Large numbers of binary semiconductors compound like CdS [15,16,17], CdSe [18,19,20], PbS [21,22,23], CuS [24,25,26], and ZnS [27,28,29] can be deposited as thin films using CBD method. For the deposition of ZnS thin films via CBD, some factors should be considered and controlled These factors include Zn precursor, S precursor, complexing agent, pH of the mixture, bath temperature, and deposition time [30,31,32,33,34,35]. The effect of annealing temperatures on the structure and bandgap of the prepared films are investigated
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