Abstract
Undoped ZnO films have been grown on Si wafers by RF-magnetron sputtering and have been characterized as a function of annealing temperature (Ta) by employing X-ray diffraction, photoluminescence (PL), and Hall effect measurements. The samples were annealed from 500 to 1000 ◦C for 3 min under an oxygen ambient in a rapid thermal annealing apparatus. The ZnO films consisted of (100) and (002) polycrystals, and their relative portion changed with varying Ta. After annealing at Ta ∼ 800 ◦C, the (100) polycrystals dominantly existed, and the near-band-edge PL peak was most intense, whilst the n-type character was most weakened. We propose that native structural defects play a key role in enhancing the n-type character of ZnO films, judging from the close correlation between the relative intensity of the bound-exciton-related PL lines and the Hall parameters as a function of Ta.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
