Abstract

This research explores the behavior of Co40Fe40W10B10 when it is sputtered onto Si(100) substrates with a thickness (tf) ranging from 10 nm to 100 nm, and then altered by an annealing process at temperatures of 200 °C, 250 °C, 300 °C, and 350 °C, respectively. The crystal structure and grain size of Co40Fe40W10B10 films with different thicknesses and annealing temperatures are observed and estimated by an X-ray diffractometer pattern (XRD) and full-width at half maximum (FWHM). The XRD of annealing Co40Fe40W10B10 films at 200 °C exhibited an amorphous status due to insufficient heating drive force. Moreover, the thicknesses and annealing temperatures of body-centered cubic (BCC) CoFe (110) peaks were detected when annealing at 250 °C with thicknesses ranging from 80 nm to 100 nm, annealing at 300 °C with thicknesses ranging from 50 nm to 100 nm, and annealing at 350 °C with thicknesses ranging from 10 nm to 100 nm. The FWHM of CoFe (110) decreased and the grain size increased when the thickness and annealing temperature increased. The CoFe (110) peak revealed magnetocrystalline anisotropy, which was related to strong low-frequency alternative-current magnetic susceptibility (χac) and induced an increasing trend in saturation magnetization (Ms) as the thickness and annealing temperature increased. The contact angles of all Co40Fe40W10B10 films were less than 90°, indicating the hydrophilic nature of Co40Fe40W10B10 films. Furthermore, the surface energy of Co40Fe40W10B10 presented an increased trend as the thickness and annealing temperature increased. According to the results, the optimal conditions are a thickness of 100 nm and an annealing temperature of 350 °C, owing to high χac, large Ms, and strong adhesion; this indicates that annealing Co40Fe40W10B10 at 350 °C and with a thickness of 100 nm exhibits good thermal stability and can become a free or pinned layer in a magnetic tunneling junction (MTJ) application.

Highlights

  • Ever since the conception of nanocrystalline materials by Rozlin in 2012, the CoFe alloy found in magnetic materials has presented excellent soft magnetic properties, categorized by high saturation magnetization (Ms) and a high Curie temperature (TC ) [1].This topic has continued to attract the attention of scholars researching CoFe material, which can be applied to magnetic equipment for sensor, actuator, and read-write recorder 4.0/).applications [2,3,4,5,6]

  • The result reveals that Full-Width at Half Maximum (FWHM) decreas with increased thicknesses and post-annealing temperature, using the FWHM dete mined by X-ray diffractometer pattern (XRD), while the grain size of CoFe (110) is calculated using the Scherrer formu

  • The results indicate that the grain sizes depend on the thickness and annealed temperature, and that the crystallization of the films rose with the thickness and annealed temperature, indicating annealing treatment supports the heating drive force to grain growth [23,24,25]

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Summary

Introduction

Ever since the conception of nanocrystalline materials by Rozlin in 2012, the CoFe alloy found in magnetic materials has presented excellent soft magnetic properties, categorized by high saturation magnetization (Ms) and a high Curie temperature (TC ) [1]. CoFeWB film is usually inserted into MTJ as a free layer, pinned layer, or combined with other layers in a multilayer structure It can be widely used in magnetic and semiconductor applications. The experiment investigates Co40 Fe40 W10 B10 films deposited on Si (100) substrates when an annealing process occurs at 200 ◦ C, 250 ◦ C, 300 ◦ C, and 350 ◦ C, respectively This experiment elected to add B and W into CoFe material and investigated their specific properties, including structure, adhesion, and magnetic characteristics, after annealing treatments

Materials and Methods
Results
X-ray diffraction patterns offilms
Magnetic Analysis
10 B10 thickness
In-plane magnetic hysteresis films:
It was was found that the maximum χac v the maximum the thickness
Maximum susceptibility
Contact
Itenergy can beofobserved surface energy of high
Conclusions
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