Abstract
A detailed understanding of the resistive switching behaviors and relevant physical mechanism is key to controlling nonvolatile memory devices. Pt/Ni0.5Zn0.5Fe2O4/Pt was synthesized by radio frequency magnetron sputtering method at room temperature. The typical bipolar resistive switching effects were detected in the annealed Ni0.5Zn0.5Fe2O4 thin films. Annealing effect on the bipolar resistive switching memory have been investigated. Good stability, identifiability, and excellent retention were obtained at the same time. Conductive filament mechanism, consisting of oxygen vacancies and reduced cations, was used to explain the physical mechanism in Pt/NZFO/Pt memory devices. The present results further enhance the applicability of spinel ferrite oxides in nonvolatile memory devices.
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