Abstract
Indium tin oxide (ITO) thin films were produced by Q- switched Nd:YAG laser with wavelength (1064 nm) has 800 mJ peak energy on In2O3 :SnO2 target with 0.3 ratio on p-type Si and on porous Si to fabricated solar cell. The as deposited and annealed thin films on glass substrates were characterized by X-ray diffraction Atomic force microscopy (AFM), UV-visible absorbance and Hall effect measurements. Then the fabricated solar cells examined in the dark and under illumination for SnO2:In2O3 /p-Si and SnO2:In2O3/Psi/p-Si annealed and as deposited samples.
Highlights
IntroductionA day there are many techniques utilized to enhance solar cell efficiency enhance solar cells efficiency [1]
A day there are many techniques utilized to enhance solar cell efficiency enhance solar cells efficiency [1].The generic solar cell is a structure consisting of two active layers, thin heavily doped top layer called the emitter or window layer and thick moderately doped bottom layer, called the base or absorber with opposite doping [2]
The dhkl spacing between crystals planes can deduced by X-ray diffraction using Bragg's law [6]
Summary
A day there are many techniques utilized to enhance solar cell efficiency enhance solar cells efficiency [1]. We need to study the optical, structural [3], morphological [4] and electrical properties for used material as window in solar cells on the side where light enters, to reach optimum efficiency [5]. X- ray diffraction used to characterize obtained films crystallinety. Where λ is the x-ray wavelength for kα transition from Cu target (1.5406 Å ), FWHM is full width at half maximum and θ is the angle of diffraction. Several parameters are used to characterize solar cells. A solar cell under illumination is characterized by the following parameters: the Short-circuit current, the open-circuit voltage, the fill factor and the power conversion efficiency [8]. The solar cell efficiency is the ratio for outcome power to incident light power density [10]
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