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Abstract
A new liquid source metalorganic chemical vapor deposition process has been developed in order to control precisely the amount of precursors vapors that is produced. Films of self-doped La0.8MnO3−δ have been deposited on LaAlO3 (012) substrates. X-ray diffraction measurements reveal an epitaxial growth. The as-deposited films exhibit both a ferromagnetic (Tc=200 K) and a metal–insulator (Tρ=130 K) transition. Postannealing experiments have been carried out and the results indicate the resistivity is considerably reduced, the temperature of transitions is raised to 320 K, and a magnetoresistance Δρ/ρ0=20% per tesla is obtained at 300 K in the 0–2 T range.
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