Abstract
The annealing condition dependence of the electrical and optical properties in C-doped InGaAs lattice-matched to InP is investigated in detail. It is revealed that hole concentration increases with annealing time at annealing temperatures between 450°C and 550°C due to hydrogen removal from epilayers. The annealing time for obtaining the maximam hole concentration is shown to become shorter with higher annealing temperature. It is also found that C acceptors are deactivated by annealing at 550°C for more than 5 min, resulting in a decrease of hole concentration, mobility and photoluminescense intensity. These deteriorations in both the electrical and optical quality of C-doped InGaAs might be caused by the transformation of C acceptors to C donors (on group-III sites) or interstitial C atoms. The optimum annealing condition was applied for the fabrication of InP/InGaAs heterojunction bipolar transistors, and the good characteristics are successfully demonstrated.
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