Abstract
Zinc-doped indium nitride (InN:Zn) films were deposited on (0001) sapphire substrates by radio-frequency reactive magnetron sputtering. All as-deposited InN:Zn film samples exhibit n-type conductivity, with a measured carrier concentration of at least 5.6×1020 cm-3. Rapid thermal annealing (RTA) at 500°C for 20 min, was used to deposit the sample at a sputtering power of 100 W, and transformed the n-type InN film into a p-type In2O3. The compensated carrier concentration and the Hall mobility at sputtering power of 50 W were 1.28×1017 cm-3 and 1.24 cm2/V·s, respectively. Two emission peaks in 20 K photoluminescence (PL) spectrum of the p-type In2O3 films were identified to correspond to the near band-to-band and conduction band-to-acceptor recombination.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
