Abstract
Polycrystalline silicon films implanted with 1×1012 to 7.8×1015/cm2 doses of boron and phosphorus were isochronally annealed up to 1100 °C. Annealing below 600 °C removes the radiation damage created by the implantation process. For doses higher than 1×1014/cm2 an abrupt decrease in sheet resistance takes place between 650 and 700 °C. Hall measurements show that this decrease is the result of a large increase in both the carrier concentration and mobility. Electron-reflection diffraction patterns show that recrystallization takes place within this temperature range. Annealing above 700 °C only causes a small further decrease in the sheet resistance.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
