Abstract
The specific contact layer resistivity between gold bumps and aluminium pads with a TiW barrier layer has been determined. It is about 1.2-1.5 Omega mu m2 and increases visibly after heat treatment at temperatures greater than 350 degrees C for 1 h but only increases a little below temperatures of 350 degrees C. The processes are associated with the formation of intermetallic compounds which is governed by diffusion of metallic elements. The activation energy of the processes was determined to be 1.15 eV, which is more than that for the structures without a TiW barrier layer. The barrier function of the TiW layer has been confirmed.
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