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Abstract
The annealing behaviour of a gamma-ray-induced dominant electron trap (Ec − 0.79 eV) in LEC undoped n-InP is studied by means of the DLTS technique. The isothermal annealing experiment shows it is a first-order process with an activation energy of 0.98 eV; this value is much smaller than those found in room-temperature-irradiated n-GaAs.
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