Abstract
The annealing behaviour of C in the group IVa metal Hf has been studied in the previously uninvestigated temperature range 650–800°C using ion-beam techniques. Diffusion couples were created by ion implantation. The time evolution of the carbon profiles were monitored by the use of the Nuclear Resonance Broadening (NRB) technique. The linear Arrhenius plot extracted from the measurements indicates that the diffusivity of implanted C in polycrystalline h.c.p. α-Hf can be described by the activation energyQ=3.9±0.2 eV and the pre-exponential factor D0=(50±47120)×105 cm2/s. The implanted distributions were used to determine the solubility of C in α-Hf for the first time.
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