Abstract
Damage-free single crystals of Al 2O 3 were implanted at liquid nitrogen temperature with In ions at 100 keV energy to a high dose of 6 × 10 16 ions/cm 2. Implantation produced an amorphous surface layer (about 80 nm thickness) having an abrupt interface with the underlying single crystal. Isothermal annealing was conducted at temperatures between 600–900 ° C for up to 24 h in flowing high purity argon gas. Several analysis techniques, such as Rutherford backscattering and channeling (RBS-C). scanning electron microscopy (SEM) and reflection high energy electron diffraction (RHEED) have been employed to investigate the annealing behaviour. Crystallization onto the underlying single crystal is substantially retarded. The implanted indium shows rapid thermal migration. The concentration depth profile of indium consists of two parts: (a) appreciable broadening corresponding to diffusion within the amorphous layer and (b) segregation of indium to the free surface to form In 2O 3, which appears as islands on the surface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
