Year-end Sale % OFF 
Abstract
The EPR spectrum of the neutral substitutional phosphorus donor has been observed in originally undoped float-zone silicon after irradiation with thermal neutrons. The EPR intensity has been measured as a function of annealing temperature between 250 and 1100 °C. The minimum temperature required to achieve full phosphorus activity is near 700 °C if the material is irradiated in a purely thermal neutron beam. If the thermal and fast-neutron doses are comparable, this limit is near 800 °C. Observed annealing stages at 350, 600, and 700 °C correlate with published recovery data for specific defects.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
