Abstract
The temperature-dependent annealing behavior of N–O complexes [D(N, O)] in Cz–Si grown under a reduced pressure of light pure nitrogen atmosphere has been studied by using infrared absorption spectra. The experimental results show that the D(N, O) have different thermal stability. The most efficient production of the D(N, O) occurs when the second annealing temperature is 650°C. Furthermore, the presence of nitrogen in Si probably suppresses the formation of thermal donors related to oxygen.
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