Abstract
The annealing behavior of dislocation loops near the projected range ( R p loops) in (001) Si implanted by 150 keV As + and 65 keV P + to a dose of 5 × 10 15 cm −2 has been studied by both plane-view and cross-sectional transmission electron microscopy and Rutherford-backscattering spectrometry. The annealing behavior of R p loops in single- and two-step annealed samples and in sample with an oxide capping layer were found to be consistent with the suggestion that their formation is related to the agglomeration of self-interstitials mediated by the presence of a high concentration of electrically inactive arsenic or phosphorous atoms. However, the R p loops were found to be more prone to be annealed out in P +-implanted than in As +-implanted (001) Si.
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