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Abstract
The migration of vacancies in diamond is of considerable fundamental interest and has been widely studied previously, while the involvement of self-interstitials in diamond is less common except through centers such as 3H, 515.8 nm, 533.5 nm, and 580 nm. In this paper, the annealing and lateral migration of some interstitial-related centers in type IIa diamond are investigated by low temperature photoluminescence (PL) microscopy, and the distributions of interstitial- and vacancy-related centers are also clearly presented and discussed.
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