Abstract
The annealing atmosphere effects and composition effects on the electrical properties of five compositions of (BaxSr1-x)Ta2O6 thin films were investigated. O2 atmosphere annealing prevented the diffusion of Ti from the substrates into thin films and thus improved the dielectric properties of thin films. Thin films of all compositions show dielectric constants higher than 60 and loss tangents lower than 1%. Sr substituted for Ba in BaTa2O6 thin films showed a strong influence on the material properties. Among the samples, (Ba0.75Sr0.25)Ta2O6 thin film shows good bias stability, a high dielectric constant of about 65, low loss tangent of about 0.9% and low leakage current of about 10-7 A/cm2, and is regarded as the most promising for application in next-generation miniaturization.
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