Abstract
Ge films were sputtered on water‐cooled substrates. Conductivity was measured during isothermal and step‐annealing experiments. These measurements indicate that activation energies for annealing increase from about 0.9–1.4 eV. A linear relationship was found between the activation energy for annealing and the change of conductivity at a certain reference temperature. The results are discussed and a mechanism is suggested in which a transformation from microcrystallinity to randomly disordered networks occurs in the low‐temperature annealing mode.
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