Annealing a graphene oxide film to produce a free standing high conductive graphene film

Abstract

A free-standing graphene oxide film (GOF) obtained by self-assembly at a liquid/air interface was annealed in a confined space between two stacked substrates to form a free-standing highly conductive graphene film. Characterization indicates that the oxygen-containing functional groups (e.g. epoxy, carboxyl, and carbonyl) were removed as small molecules (e.g. H 2O, CO 2, and CO) during the annealing, meanwhile the size of sp 2 domains in the film was decreased. When annealed between two stacked wafers, random interlayer expansion and fractional movement in the GOF were suppressed by the pressure-induced friction, which helps preserve the morphology of the film. The conjugation in the basal plane of graphene and π–π interactions between well stacked graphene sheets favor the transportation of charge carriers in the film, to produce a good electrical conductivity of the resulting free-standing reduced GOF (increased from 1.26 × 10 −5 to 272.3 S/cm).