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https://doi.org/10.1149/1.2115433
Copy DOIPublication Date: Dec 1, 1984 | |
Citations: 3 | License type: iop-standard |
I‐V characteristics, voltage dependence of the quantum efficiency, and spectral response were compared for annealed single‐crystal photoanodes. Annealing in cadmium atmosphere improved the overall solar response considerably, while annealing under vacuum revealed a poor response for photon energies larger than 1.8 eV and a high quantum efficiency for near‐bandgap energies. This behavior may be attributed to electron‐hole pair generation from interbandgap states and a large density of minority carrier recombination centers near the crystal surface, owing to a high nonstoichiometry and a selenium layer at the surface. Annealing in selenium atmosphere resulted in very poor solar response caused by compensation. Simultaneous illumination of the electrodes with a He‐Ne laser strongly enhanced the quantum efficiency for vacuum‐annealed crystals for near‐bandgap photons. We attribute this to electron trapping in the selenium‐rich surface, with a resulting increase in depletion‐layer width in the cadmium selenide.
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