Abstract
InP crystals were grown by the Czochralski technique with an admixture of Cu in the melt. Samples of as-grown crystals were of n-type conductivity with the estimated concentration of Cu smaller than 5 × 1015 cm−3. The samples were converted to the p-type semi-insulating state by annealing at 500 °C followed by fast cooling. The annealed samples were investigated by temperature-dependent Hall measurements and low-temperature Fourier transform infrared absorption. New peaks around 2100 cm−1 were interpreted as due to Cu2+ 3d internal transitions.
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