Abstract
Multi-layer graphene (MLG) films were transferred onto p-GaN layer as transparent conductive electrodes in InGaN green light-emitting diodes (MLG-GLEDs), and their optoelectronic properties were investigated. The interdiffusion between metal atoms from metal pads and Ga atoms from p-GaN had a strong effect on the contact barrier at graphene/p-GaN interface, resulting in substantial changes in transport characteristics of MLG-GLEDs and deterioration of the electrical contact between graphene and p-GaN. A high temperature annealing treatment was employed to improve the light-emitting performance of MLG-GLEDs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
