Abstract
We observe a dramatic reduction in the Staebler–Wronski metastable defect creation efficiency in device-quality films of hydrogenated amorphous silicon after they undergo a 20 min anneal treatment at 350 to 400 °C. After several hours of rapid degradation with a high intensity pulsed laser, there are about half as many total dangling bond defects in the annealed samples as in unannealed control samples. This reduction is observed in both 1.02-μm- and 0.22-μm-thick films, indicating it is not a surface-related artifact. The improved stability is likely caused by H motion, which restructures the Si–Si network and H-related nanovoids.
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