Abstract
For the purposes of improving the performance of the SWIR detector, two types of annealing treatment for extended wavelength In0.83Ga0.17As photodiodes with PIN structure are studied. In contrast to the sample A (rapid thermal annealing is performed after mesa etching for fabricating the In0.83Ga0.17As photodiodes), the sample B (rapid thermal annealing is performed before mesa etching for fabricating the In0.83Ga0.17As photodiodes) has a lower dark current at the same test temperature 220K and 300K, respectively. The different anneal treatment improves quality of the material by decreasing the defects of devices structure. The voltage–current curves have been used to measure the dark current of different devices. Plane-view electron beam induced current (PV-EBIC) and secondary electron (SE) images have been used to evaluate the performance correlated imperfection or defect features of In0.83Ga0.17As photodiodes structures and the defect density is 2.33×107cm−2 for sample A, 8.14×106cm−2 for sample B.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
