Abstract
The bandwidth, low cost, great storage capacity and performance are characteristics of the random Access Memories (RAM).Some kinds of RAM include ferro-random access memory (FRAM) and magnetoresistive random access memory (MRAM), the latter being of great interest to the scientific community since storage is achieved via magnetic orientation rather than electric orientation. In this paper, we analyze the effect of the application of an external magnetic field on the current-voltage (I-V) characteristics of Schottky barriers made of silicon-gold, to show the effects of magnetoresistance in dispositive semiconductors suited for use as memory storage.
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