Abstract
The electrical resistivity ϱ of single crystals of VO2 has been measured in directions parallel and perpendicular to the {100} mon. = {100} tetr. direction for 180 <T <650°K. On both sides of the semiconductor-metal transition temperature ϱ⊥ϱ″ ≈ 0.5 (Tt = 340°K). This result does not agree with Morin's model of metallic conductivity in a narrow 3d-subband, and indicates clearly that the oxygen 2p-orbitals are involved in the conduction mechanism.
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