Abstract
AbstractWe determine the anisotropic electron effective mass and mobility parameters in wurtzite InN thin films with free electron concentration N from 1.8 × 1017 cm–3 to 9.5 × 1018 cm–3 using Infrared Magneto‐optic Generalized Ellipsometry. The room‐temperature measurements were carried out with magnetic fields up to 4.5 T. For the Γ‐point we estimate m *⊥ = 0.047m 0 and m *‖ = 0.039m 0 for polarization perpendicular and parallel to the c ‐axis, respectively. Scattering by impurities or ionized donors may explain the decrease of mobility for polarization parallel to the c ‐axis from 1600 cm2/(Vs) to 800 cm2/(Vs) with increase in N , where the perpendicular mobility is further decreased, likely caused by additional grain boundary scattering. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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