Anisotropy of electronic wave functions in self-assembled InAs dots embedded in the center of a GaAs quantum well studied by magnetotunneling spectroscopy

E E Vdovin,A V Veretennikov,Yu V Dubrovskii,G Hill,L Eaves,A Levin,A Patane,Yu N Khanin,M Henini,P C Main

doi:10.1134/1.1402204

Anisotropy of electronic wave functions in self-assembled InAs dots embedded in the center of a GaAs quantum well studied by magnetotunneling spectroscopy

E E Vdovin, A V Veretennikov + Show 8 more

https://doi.org/10.1134/1.1402204

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Journal: Jetp Letters	Publication Date: Jul 1, 2001
Citations: 4

Affiliation: Institute of Solid State Physics, University of Sheffield, University of Nottingham, Institute of Microelectronics Technology and High Purity Materials

#Growth Plane #Biaxial Symmetry + Show 8 more

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Abstract

We present an experimental study of electron wave functions in InAs/GaAs self-assembled quantum dots by magnetotunneling spectroscopy. The electronic wave functions have a biaxial symmetry in the growth plane, with axes corresponding to the main crystallographic directions in the growth plane. Moreover, we observed the in-plane anisotropy of the subbands of the quantum well.

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