Abstract
We have studied the electrical transport properties of ordered In x Ga 1− x P grown on GaAs substrate using temperature-dependent (5–300 K) conductivity and Hall effect measurements. Intentionally undoped In x Ga 1− x P layers, with x In ranging from 0.39 to 0.55, were prepared by low-pressure OMVPE at a growth temperature of 640°C. Different behaviour of transport properties in [0 1 ̄ 1] and [0 1 1] crystallographic directions was observed in samples with different mismatch. The transport anisotropy is connected with the existence of misfit lines in already slightly mismatched layers. Samples with lines oriented in the [0 1 ̄ 1] direction are in this direction more conductive and they exhibit in this direction significant decrease of resistance with decreasing temperature.
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