Abstract
ABSTRACTWe investigated spatial non-uniformity and optical anisotropy in hydrogenated silicon thin films using infrared spectroscopy and other techniques. The films ranged in morphology from amorphous to micro-crystalline, as determined by Raman spectroscopy and X-ray diffraction (XRD). Trace element analysis of the films was carried out using secondary ion mass spectrometry (SIMS). We used polarized attenuated total reflection (ATR) measurements together with Fourier transform infrared (FTIR) spectroscopy to investigate anisotropy in the Si-H covalent bonding structure of the films, and also to detect oxide impurity phases present at certain sites in some samples. The FTIR-ATR measurements were performed using a germanium (Ge) contact microprobe with a 100-micron sampling area, as well as on films deposited on standard crystalline Si and Ge ATR substrates. The Ge contact ATR microprobe enabled relatively interference-free measurements of the IR spectra of a-Si:H and µc-Si:H films deposited on conductive substrates such as stainless steel and transparent conductive oxides, and is also sensitive to the spatial distribution of oxide precipitates in the films. This measurement is difficult or impossible using transmission or reflection IR spectroscopy.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
