Abstract
AbstractA high‐momentum component of angular distributions of annihilation photons (HMC ADAP) has been studied experimentally and theoretically in single crystals of germanium, silicon and gallium arsenide and in a single crystal and polycrystal silicon. The model oe the process of positron annihilation with electrons of ion cores has been suggested and the calculations of HMC ADAP curves have been performed for crystallographic directions [111], [110] and [100] of a dimond‐like lattice. It has been established that ADAP anisotropy characteristics in a single crystal of germanium are slightly dependent on the temperature in the range of ΔT = 300÷930 K. It has been concluded that HMC ADAP anisotropy is caused by annihilation of thermalizod positrons with electrons of outer shells of ion cores in crystal lattices of dimond‐like semiconductors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
